Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs
p.579
p.579
Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon
p.585
p.585
Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
p.591
p.591
In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere
p.597
p.597
The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors
p.603
p.603
Transition-Metal Luminescence in III-V Alloys
p.615
p.615
The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR
p.621
p.621
Identification of the Co1+ Double Acceptor State in GaAs
p.627
p.627
Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth Elements
p.633
p.633
The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
603-614
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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