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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Variable-Energy Positron-Beam Studies of Si...

Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1471-1474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1471

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Online since:

January 1992

Authors:

Akira Uedono, Long Wei, C. Dosho, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, M. Tamura

Keywords:

Defect, Doppler Broadening Profile, Ion Implantation, Monoenergetic Positron Beam, Silicon, Vacancy

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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