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Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
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A Diffusion of Positrons by an Electric Field in MOS Transistors
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Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110A Diffusion of Positrons by an Electric Field in...

A Diffusion of Positrons by an Electric Field in MOS Transistors

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1475-1478

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1475

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Cite this paper

Online since:

January 1992

Authors:

Akira Uedono, Long Wei, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, Y. Ohji

Keywords:

Doppler Broadening Profile, Interface, Metal-Oxide-Semiconductor (MOS), Monoenergetic Positron Beam, Silicon

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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