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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Characterization of Point Defects in...

Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1487-1490

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1487

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Online since:

January 1992

Authors:

Long Wei, J.L. Lee, Shoichiro Tanigawa, M. Kawabe

Keywords:

Be, GaAs, Interstitial, MBE, Silicon, Slow Positron, Vacancy

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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