Paper Titles

Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam
p.1479

Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
p.1483

Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons
p.1487

The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
p.1491

The Study of Surface State of III-V Compound Semiconductors by Slow Positrons
p.1495

Positron Lifetime Study of Polymers
p.1501

Positronium Formation in Aqueous Solutions of Surfactant Substances
p.1505

TSES (Time-Selected-Energy-Spectrum) Study of Positronium-Oxygen Interactions
p.1509

Positronium Polarization in Liquids
p.1513

HomeMaterials Science ForumMaterials Science Forum Vols. 105-110The Study of Surface State of III-V Compound...

The Study of Surface State of III-V Compound Semiconductors by Slow Positrons

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-9

Info:

Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1495-1500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1495

Citation:

Cite this paper

Online since:

January 1992

Authors:

Long Wei, J.L. Lee, Shoichiro Tanigawa, H. Oigawa, Y. Nannichi

Keywords:

(NH₄)₂S_x-Treated, Chemisorption, GaAs, GaP, Slow Positron, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: