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A Diffusion of Positrons by an Electric Field in MOS Transistors
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Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam
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Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
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Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons
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The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Monoenergetic Positron Beam Studies of Near...

Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1483-1486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1483

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Online since:

January 1992

Authors:

Akira Uedono, Long Wei, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, K. Wada, H. Nakanishi

Keywords:

Defect, Doppler Broadening Profile, GaAs, Ion Implantation, Monoenergetic Positron Beam, Silicon, Vacancy

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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