The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

1491-1494

DOI:

10.4028/www.scientific.net/MSF.105-110.1491

Citation:

L. Wei et al., "The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons ", Materials Science Forum, Vols. 105-110, pp. 1491-1494, 1992

Online since:

January 1992

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