Paper Titles

Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam
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Study of Oxygen Atom Clustering in Si Induced by External Stress by Means of a Monoenergetic Positron Beam
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Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
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A Diffusion of Positrons by an Electric Field in MOS Transistors
p.1475

Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam
p.1479

Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
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Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons
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The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs during Rapid Thermal Annealing Studied by Slow Positrons
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The Study of Surface State of III-V Compound Semiconductors by Slow Positrons
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HomeMaterials Science ForumMaterials Science Forum Vols. 105-110Vacancy-Type Defects in Si+- and B+-Implanted Si...

Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam

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Periodical:

Materials Science Forum (Volumes 105-110)

Pages:

1479-1482

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.105-110.1479

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Online since:

January 1992

Authors:

Akira Uedono, Long Wei, Y. Tabuki, H. Kondo, Shoichiro Tanigawa, J. Sugiura, Minoru Ogasawara

Keywords:

Defect Depth Distribution, Implanted Si, Vacancy Type Defects

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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