Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

1479-1482

DOI:

10.4028/www.scientific.net/MSF.105-110.1479

Citation:

A. Uedono et al., "Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam", Materials Science Forum, Vols. 105-110, pp. 1479-1482, 1992

Online since:

January 1992

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