Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs)

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Periodical:

Materials Science Forum (Volumes 117-118)

Edited by:

Tsunemasa Taguchi

Pages:

243-248

DOI:

10.4028/www.scientific.net/MSF.117-118.243

Citation:

S. F. Chichibu et al., "Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs) ", Materials Science Forum, Vols. 117-118, pp. 243-248, 1993

Online since:

January 1993

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