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HomeMaterials Science ForumMaterials Science Forum Vols. 117-118

Materials Science Forum Vols. 117-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118

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Table of Contents

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Paper Title Page

Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon

Authors: J. Hartung, Joerg Weber

135

The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon

Authors: M. Singh, Gordon Davies, Edward C. Lightowlers, G.D. Watkins

141

Iron-, Manganese- and Chromium-Indium Pairs in Silicon

Authors: U. Reislöhner, S. Schwarz, W. Witthuhn

147

Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition

Authors: Koji Gotoh, J. Murota, S. Ono

153

Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth

Authors: K. Fujita, S. Fukatsu, N. Usami, H. Yaguchi, Y. Shiraki, R. Ito

159

Strong Electron-Phonon Interaction of a Hydrogen-Carbon Complex and the Motion of Isolated Hydrogen in Si

Authors: Y. Kamiura, T. Okashita, Y. Nishiyama, Fumio Hashimoto

165

Piezo-Magneto-Resistivity of Si-B in the Hopping Regime

Authors: M. Stöhr, P. Janiszewski, J.A. Chroboczek

171

Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon

Authors: J.D. Campion, K.G. McGuigan, M.O. Henry, Maria Helena Nazaré

177

Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals

Authors: Y. Kitagawara, K. Takamizawa, Takao Takenaka

183

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Authors: E. Iino, I. Fusegawa, H. Yamagishi

189

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