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Materials Science Forum Vols. 117-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118

ToC:

Table of Contents

Paper Title Page

Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine
Authors: Shigefusa F. Chichibu, A. Iwai, Yuko Nakahara, S. Matsumoto, Hiroyuki Higuchi, Long Wei, Shoichiro Tanigawa
315
Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double δ-Doped AlxGa1-xAs
Authors: M.R. Junnarkar, E. Yamaguchi, T. Saku
321
Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing
Authors: E.A. de Andrada e Silva, D. Wang, I.C. da Cunha Lima
327
Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells
Authors: Q.X. Zhao, T. Westgaard, Bo Monemar, B.O. Fimland, K. Johannessen
333
Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
Authors: C.I. Harris, M. Stutzmann, K. Köhler
339
Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence
Authors: N. Kamata, E. Kanoh, T. Ohsaki, K. Yamada
345
Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD
Authors: L. Lu, J. Zhou, W. Zhang, Masayoshi Umeno
351
Optical Absorption Lines in Heat-Treated GaAs
Authors: Masashi Suezawa, Koji Sumino
357
Te-Related Donor States in AlxGa1-xAs
Authors: J. G. Kang, Q. Huang, K. Hoshikawa, T. Fukuda
363
Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -
Authors: Kenji Murakami, Takasumi Ohyanagi, Kazusato Hara, K. Masuda
369

Showing 51 to 60 of 89 Paper Titles

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