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Materials Science Forum
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Vols. 117-118
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Materials Science Forum Vols. 117-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118

ToC:

Table of Contents

Paper Title Page

Donor Concentration Dependence of GaP Luminescence
Authors: Teresa Monteiro, E. Pereira, F. Domingues-Adame, J. Piqueras
375
Various Configurations of Silicon-Related Defects in GaAs
Authors: Yusuke Okada, Koichi Fujii
381
Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations
Authors: L. Pavesi, I. Harrison, F. Piazza, M. Henini
387
The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method
Authors: Koichi Fujii, Fumio Orito, H. Fujita
393
Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs
Authors: H.-M. You, U.M. Gösele, T.Y. Tan
399
Carbon in LEC Grown GaAs Crystals
Authors: Y. Otoki, M. Sahara, S. Shinzawa, S. Kuma
405
The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
Authors: S. Fujii, Long Wei, Shoichiro Tanigawa
411
Impurity Diffusion into GaAs through the SiO2 Protective Layers
Authors: D.K. Gautam, Yukihiro Shimogaki, Y. Nakano, K. Tada
417
Electron Beam Doping of Si and Zn Impurities into GaAs
Authors: T. Wada, Mikako Takeda, A. Takeda
423
Effect of Hydrogen Passivation on Lightly n-Doped GaAs
Authors: Chao Jung Chen, Yu Huai Chang, T.C. Chen, S.H. Li, Yun Fa Chen, H.H. Lin
429

Showing 61 to 70 of 89 Paper Titles

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