For Libraries For Publication Open Access Downloads About Us Contact Us
Volumes
Materials Science Forum
Vols. 130-132
Materials Science Forum
Vol. 129
Materials Science Forum
Vols. 126-128
Materials Science Forum
Vols. 123-125
Materials Science Forum
Vol. 122
Materials Science Forum
Vols. 119-121
Materials Science Forum
Vols. 117-118
Materials Science Forum
Vol. 116
Materials Science Forum
Vols. 113-115
Materials Science Forum
Vols. 111-112
Materials Science Forum
Vols. 105-110
Materials Science Forum
Vols. 102-104
Materials Science Forum
Vols. 100-101

Materials Science Forum Vols. 117-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.117-118

ToC:

Table of Contents

Paper Title Page

Zeeman Study of 735meV Photoluminescence Band in Iron-Doped Silicon
Authors: M.I. Càlao, M. Celeste Carmo
255
Thermal Process Dependence of Chromium Donor/Acceptor in Silicon
Authors: M. Takiyama, Shigehiro Ohtsuka, M. Tachimori
261
Co-Acceptor Complexes in Si
Authors: A.-M. Van Bavel, G. Langouche
267
Defect Observation in Silicon Surface Layers by Surface Wave Resonance in RHEED
Authors: Koushirou Ueda
273
Differential Hall-Effect Spectroscopy of Rare-Earth Impurities (Ce, Er) in Silicon
Authors: H. Nakayama, A. Matsuura, M. Kohno, Taneo Nishino
279
Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells
Authors: C.I. Harris, Bo Monemar, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard
285
Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy
Authors: K. Ikuta, Haruki Yokoyama, Naohisa Inoue
291
Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors
Authors: H. Ohno, H. Munekata, T. Penney, S. von Molnár, L. Chang
297
Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP
Authors: Akihito Taguchi, Kenichiro Takahei
303
Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs
Authors: J.H. Svensson, Joerg Weber
309

Showing 41 to 50 of 89 Paper Titles

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.