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Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
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Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Optically Detected Cyclotron Resonance for Defect...

Optically Detected Cyclotron Resonance for Defect Characterization

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1353-1358

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1353

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Online since:

October 1993

Authors:

Marek Godlewski, W.M. Chen, Bo Monemar

Keywords:

Defect Related Recombination, ODCR, Optical Characterization

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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