Paper Titles

First-Principles Simulations of Vacancies and Antisites in InP
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Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs
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Scanning Tunneling Microscopy of Si Donors in GaAs
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X-Ray Triple Crystal Diffractometry of Structural Defects in Si_mGe_n Superlattices
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GIXA, a Novel Technique in Near-Surface Analysis
p.1331

Electrically Detected Electron Paramagnetic Resonance
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Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon
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Optically Detected Cyclotron Resonance for Defect Characterization
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Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147GIXA, a Novel Technique in Near-Surface Analysis

GIXA, a Novel Technique in Near-Surface Analysis

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1331-1336

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1331

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Online since:

October 1993

Authors:

W.V.D. Hoogenhof, D.K.G. De Boer

Keywords:

Glancing Incidence, Reflectivity, Standing Wave Fluorescence

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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