Paper Titles

Photoexcitation of Defects Related to B in GaAs
p.1281

Magnetotunnelling through 1s- and 2p-Like Donor States in the Quantum Well of Resonant-Tunnelling Diodes
p.1287

Theoretical Study on the Electronic States of Dislocations and Dislocation Motion in Semiconductors
p.1293

Ab Initio Cluster Theory of Substitutional Oxygen in Silicon
p.1299

First-Principles Simulations of Vacancies and Antisites in InP
p.1305

Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs
p.1311

Scanning Tunneling Microscopy of Si Donors in GaAs
p.1319

X-Ray Triple Crystal Diffractometry of Structural Defects in Si_mGe_n Superlattices
p.1325

GIXA, a Novel Technique in Near-Surface Analysis
p.1331

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147First-Principles Simulations of Vacancies and...

First-Principles Simulations of Vacancies and Antisites in InP

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1305-1310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1305

Citation:

Cite this paper

Online since:

October 1993

Authors:

R. Virkkunen, A.P. Seitsonen, M.J. Puska, Risto M. Nieminen

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: