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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Ab Initio Cluster Theory of Substitutional Oxygen...

Ab Initio Cluster Theory of Substitutional Oxygen in Silicon

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1299-1304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1299

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Online since:

October 1993

Authors:

A.B. van Oosten

Keywords:

Ab Initio Cluster Calculation, Hyperfine Interaction, Infrared Absorption, Lattice Relaxation, Non-Radiative Decay, Theory, Vacancy Oxygen Defects

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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