Paper Titles

A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals
p.1391

Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si
p.1397

Defect Concentration Gradients at Semiconductor Junctions
p.1403

Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices
p.1409

Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films
p.1415

U-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam Doping
p.1421

Zinc Diffusion in Gallium Antimonide
p.1427

Evidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance Spectroscopy
p.1433

Influence of Spatial Coulomb Potential Fluctuations on the Mobility in Al_xGa_1-xAs with DX Centers
p.1439

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Particularities of the Zn Diffusion into InGaAsP...

Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1415-1420

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1415

Citation:

Cite this paper

Online since:

October 1993

Authors:

B.Ya. Ber, L.A. Busygina, A.T. Gorelenok, Alex A. Kamanin, A.V. Merkulov, I.A. Mokina, N.M. Schmidt, I.Yu. Yakimenko, T.A. Yurre

Keywords:

Diffusion, InGaAsP, InP, Zn

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: