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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Evidence of Fast Diffusion of Plasma-Induced...

Evidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance Spectroscopy

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1433-1438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1433

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Online since:

October 1993

Authors:

Kazumi Wada, Hideo Nakanishi

Keywords:

Defect Penetration, Diffusivity, Plasma Etching Damage, Point Defect

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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