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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Characterization of EL2 in Annealed LT-GaAs

Characterization of EL2 in Annealed LT-GaAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1599-1604

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1599

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Online since:

October 1993

Authors:

N.D. Jäger, P. Dreszer, N. Newman, A.K. Verma, Zuzanna Liliental-Weber, Eicke R. Weber

Keywords:

El2 Defect, Low Temperature Grown GaAs, Photocurrent, Photoquenching

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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