Paper Titles

Influence of Micro-Inhomogeneities on the Electron Mobility in Undoped N-Type LEC GaAs
p.1565

Dislocation-Induced Defect Levels in Silicon
p.1571

Structure Investigations of Heteroepitaxial CoSi₂/Si Layers Formed by Ion Implantation
p.1577

Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation
p.1583

Relation between Dislocation Motion and Formation of Intrinsic Point Defects
p.1589

The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates
p.1595

Characterization of EL2 in Annealed LT-GaAs
p.1599

Theory of Dislocations in GaAs
p.1605

Electrical Properties of Organometallic Vapour Phase Epitaxial GaAs Grown on Si Substrates
p.1611

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Relation between Dislocation Motion and Formation...

Relation between Dislocation Motion and Formation of Intrinsic Point Defects

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1589-1594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1589

Citation:

Cite this paper

Online since:

October 1993

Authors:

H.S. Leipner, Reinhard Krause-Rehberg, A. Polity, Th. Drost, H. Alexander

Keywords:

Dislocation, Intrinsic Point Defects (IPD), Plastic Deformation, Positron Annihilation, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: