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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Structure Quality of Single-Domain MBE GaAs...

The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1595-1598

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1595

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Online since:

October 1993

Authors:

V.G. Antipov, R.N. Kutt, S.A. Nikishin, S.S. Ruvimov, L.M. Sorokin, M.V. Stepanov

Keywords:

Antiphase Domain, Molecular Beam Epitaxy, Structure Quality, TEM, Threading Dislocation Density, X-Ray Diffractometry

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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