The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

1595-1598

DOI:

10.4028/www.scientific.net/MSF.143-147.1595

Citation:

V.G. Antipov et al., "The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates", Materials Science Forum, Vols. 143-147, pp. 1595-1598, 1994

Online since:

October 1993

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