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Structure Investigations of Heteroepitaxial CoSi₂/Si Layers Formed by Ion Implantation
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Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation
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Relation between Dislocation Motion and Formation of Intrinsic Point Defects
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The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Oxygen Clusters in As-Grown Cz-Si Crystals Probed...

Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1583-1588

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1583

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Online since:

October 1993

Authors:

Atsushi Ikari, Kazuto Kawakami, Hiroyo Haga, Akira Uedono, Long Wei, T. Kawano, Shoichiro Tanigawa

Keywords:

Oxygen, Positron Annihilation, Quenching, Silicon, Stacking Fault

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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