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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Electronic Properties of Defects Introduced during...

Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1559-1564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1559

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Online since:

October 1993

Authors:

F. Danie Auret, S.A. Goodman, W.E. Meyer, R.M. Erasmus, G. Myburg

Keywords:

Alpha Irradiation, DLTS, Electron Irradiation, GaAs, Irradiation Induced Defects

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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