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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Dislocation-Induced Defect Levels in Silicon

Dislocation-Induced Defect Levels in Silicon

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1571-1576

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1571

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Online since:

October 1993

Authors:

W. Staiger, G. Pfeiffer, K. Weronek, A. Höpner, Joerg Weber

Keywords:

Dislocation, DLTS, Photoluminescence (PL), Silicon, TEM

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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