Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen
p.555
p.555
Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements
p.561
p.561
Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM
p.567
p.567
Coulomb Energy of Traps in Semiconductor Space Charge Regions
p.573
p.573
Effect of Interface on Capture and Emission Processes via Deep Centers
p.579
p.579
Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface
p.583
p.583
Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset
p.587
p.587
Impurity-Enhanced Disordering in Superlattices
p.593
p.593
Exciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending Investigation
p.599
p.599
Effect of Interface on Capture and Emission Processes via Deep Centers
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
579-582
Citation:
Online since:
October 1993
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Сopyright:
© 1994 Trans Tech Publications Ltd. All Rights Reserved
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