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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Coulomb Energy of Traps in Semiconductor Space...

Coulomb Energy of Traps in Semiconductor Space Charge Regions

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

573-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.573

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Online since:

October 1993

Authors:

M. Schulz

Keywords:

Coulomb Blockade, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Trapping Rates

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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