Paper Titles

Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
p.641

Si Diffusion out of δ-Planes in a GaAs Superlattice
p.647

Luminescence of a Delta Doping Related Exciton in GaAs:Si
p.653

Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
p.657

The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs
p.663

Electronic States of n-Type δ-Doping in GaAs Heterostructures
p.669

Phonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si
p.675

High Spectral Resolution Study of Shallow Donors in GaInAs
p.681

The Influence of Spin and Composition Fluctuations on Shallow Donor States in Semimagnetic Semiconductors
p.687

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Influence of Silicon Diffusion on the...

The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

663-668

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.663

Citation:

Cite this paper

Online since:

October 1993

Authors:

Paul M. Koenraad, István Bársony, A.F.W. van der Stadt, J. Perenboom, J.H. Wolter

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: