The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

663-668

DOI:

10.4028/www.scientific.net/MSF.143-147.663

Citation:

P. M. Koenraad et al., "The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs", Materials Science Forum, Vols. 143-147, pp. 663-668, 1994

Online since:

October 1993

Export:

Price:

$35.00

In order to see related information, you need to Login.