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DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
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Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
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Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
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Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
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Si Diffusion out of δ-Planes in a GaAs Superlattice
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Luminescence of a Delta Doping Related Exciton in GaAs:Si
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Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
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The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs
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Electronic States of n-Type δ-Doping in GaAs Heterostructures
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Si Diffusion out of δ-Planes in a GaAs...

Si Diffusion out of δ-Planes in a GaAs Superlattice

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

647-652

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.647

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Online since:

October 1993

Authors:

L. Hart, P.F. Fewster, M.J. Ashwin, M.R. Fahy, R.C. Newman

Keywords:

HRXD, LVM, MBE, Post-Growth Annealing, δ-Doping

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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