Paper Titles

Exciton Spectroscopy of Near-Surface GaAs/Al_0.3Ga_0.7As Quantum Wells - The New Method of Band Bending Investigation
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Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells
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Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga_1-xAl_xSb/InAs/Ga_1-xAl_xSb Single Quantum Wells
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Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures
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DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
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Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
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Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
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Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
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Si Diffusion out of δ-Planes in a GaAs Superlattice
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147DX Centers in Reduced Dimensionality n-Type AlGaAs...

DX Centers in Reduced Dimensionality n-Type AlGaAs Structures

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Abstract:

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

623-628

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.623

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Online since:

October 1993

Authors:

Ignacio Izpura, Elias Muñoz Merino, Enrique Calleja, F. Garcia

Keywords:

AlGaAs, Dimensionality, DLTS, DX Centers

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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