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Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells
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Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures
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DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
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Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
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Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
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Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
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Si Diffusion out of δ-Planes in a GaAs Superlattice
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Luminescence of a Delta Doping Related Exciton in GaAs:Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Non-Radiative Recombination via Deep Level Defects...

Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

629-634

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.629

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Online since:

October 1993

Authors:

Peder Bergman, P.O. Holtz, Bo Monemar, M. Sundaram, J.L. Merz, A.C. Gossard

Keywords:

Decay Time, GaAs/AlGaAs, Non-Radiative Recombination, Quantum Well

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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