Paper Titles

Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures
p.617

DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
p.623

Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
p.629

Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
p.635

Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
p.641

Si Diffusion out of δ-Planes in a GaAs Superlattice
p.647

Luminescence of a Delta Doping Related Exciton in GaAs:Si
p.653

Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
p.657

The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs
p.663

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Influence of DX Center Structure on Si Modulation...

Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

641-646

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.641

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Online since:

October 1993

Authors:

G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler

Keywords:

DX Center, Modulation δ-Doping, Potential Fluctuations

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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