Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

641-646

DOI:

10.4028/www.scientific.net/MSF.143-147.641

Citation:

G. Brunthaler et al., "Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells", Materials Science Forum, Vols. 143-147, pp. 641-646, 1994

Online since:

October 1993

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$35.00

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