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Optical Properties and Electronic Structure of ZnSe-Based Heterostructures Grown by Low Temperature MOVPE
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Characterisation of II-Vi Structures by Raman Spectroscopy
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Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
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Dislocation and Strain Distributions in CdTe/GaAs (001) Epilayers
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On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds
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Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
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3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam
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Structure Study of the Hg_1-xCd_xTe VPE Layers Grown on CdTe MOCVD Substrates
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Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures
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HomeMaterials Science ForumMaterials Science Forum Vols. 182-184On the Mechanism of RHEED Oscillations in...

On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.155

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Online since:

February 1995

Authors:

J. Griesche, N. Hoffmann, M. Rabe, K. Jacobs

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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