Paper Titles

Ultrafast Dynamics of Charge Carriers in ZnSe-Based II-VI Quantum Wells and Epilayers
p.127

Optical Properties and Electronic Structure of ZnSe-Based Heterostructures Grown by Low Temperature MOVPE
p.133

Characterisation of II-Vi Structures by Raman Spectroscopy
p.141

Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
p.147

Dislocation and Strain Distributions in CdTe/GaAs (001) Epilayers
p.151

On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds
p.155

Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
p.159

3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam
p.163

Structure Study of the Hg_1-xCd_xTe VPE Layers Grown on CdTe MOCVD Substrates
p.167

HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Dislocation and Strain Distributions in CdTe/GaAs...

Dislocation and Strain Distributions in CdTe/GaAs (001) Epilayers

Article Preview

Abstract:

You might also be interested in these eBooks

II-VI Compounds and Semimagnetic Semiconductors

Info:

Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

151-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.151

Citation:

Cite this paper

Online since:

February 1995

Authors:

R.I. Port, K. Durose, B.K. Tanner, J.E. Hails, J.S. Gough, M.G. Astles, M. Celeste Carmo, Manuel J. Soares

Keywords:

CdTe/GaAs, DCXRD, Dislocation, MOVPE, Photoluminescence (PL)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: