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Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
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3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam
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Structure Study of the Hg_1-xCd_xTe VPE Layers Grown on CdTe MOCVD Substrates
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Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures
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HomeMaterials Science ForumMaterials Science Forum Vols. 182-1843-D Mapping of Strain and Defects in a ZnSE...

3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

163-166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.163

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Online since:

February 1995

Authors:

C. Trager-Cowan, A.M. Paterson, R.W. Martin, K.P. O'Donnell, J.T. Mullins, G. Horsburgh, K.A. Prior, B.C. Cavenett

Keywords:

Cathodoluminescence, Mapping, Profiling, Strain, ZnSe

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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