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HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Comparison of the Structural Properties of...

Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

159-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.159

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Online since:

February 1995

Authors:

J. Woitok, J. Platen, B. Wachtendorf, W. Taudt, M. Heuken

Keywords:

MOVPE, X-Ray Diffraction (XRD), ZnSe

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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