Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors

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Periodical:

Materials Science Forum (Volumes 182-184)

Edited by:

H. Heinrich and J.B. Mullin

Pages:

159-162

DOI:

10.4028/www.scientific.net/MSF.182-184.159

Citation:

J. Woitok et al., "Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors", Materials Science Forum, Vols. 182-184, pp. 159-162, 1995

Online since:

February 1995

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