Paper Titles

Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
p.159

3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam
p.163

Structure Study of the Hg_1-xCd_xTe VPE Layers Grown on CdTe MOCVD Substrates
p.167

Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures
p.171

Low Resistivity Contacts Epitaxially Grown on n-Type CdTe Using Rare Earth Metals
p.175

Photoluminescence of CdZnTe and CdZnSe Quantum Well Wires Fabricated by Reactiv Ion Etching
p.179

Excitonic Processes in Highly Excited Zn_1-xCd_xSe/ZnSe and CdSe/ZnSe Single and Multiple Quantum Wells
p.183

Lateral Bandgap Modulation in CdTe/CdMgTe Heterostructures by Selective Ion-Implantation
p.187

Analytical Model for Calculating Exciton Energies as Measured in Zn_1-xCd_xSe/ZnSe and ZnSe/ZnS_xSe_1-x Quantum Wells
p.191

HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Low Resistivity Contacts Epitaxially Grown on...

Low Resistivity Contacts Epitaxially Grown on n-Type CdTe Using Rare Earth Metals

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.175

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Online since:

February 1995

Authors:

B. Daudin, D. Brun

Keywords:

Epitaxy, II-VI Semiconductors, Ohmic Contact

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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