Paper Titles

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Structure Study of the Hg_1-xCd_xTe VPE Layers Grown on CdTe MOCVD Substrates
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Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures
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Low Resistivity Contacts Epitaxially Grown on n-Type CdTe Using Rare Earth Metals
p.175

Photoluminescence of CdZnTe and CdZnSe Quantum Well Wires Fabricated by Reactiv Ion Etching
p.179

Excitonic Processes in Highly Excited Zn_1-xCd_xSe/ZnSe and CdSe/ZnSe Single and Multiple Quantum Wells
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Lateral Bandgap Modulation in CdTe/CdMgTe Heterostructures by Selective Ion-Implantation
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Analytical Model for Calculating Exciton Energies as Measured in Zn_1-xCd_xSe/ZnSe and ZnSe/ZnS_xSe_1-x Quantum Wells
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Zn_1-xCd_xSe Quantum Wells in ZnMgSe
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HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Photoluminescence of CdZnTe and CdZnSe Quantum...

Photoluminescence of CdZnTe and CdZnSe Quantum Well Wires Fabricated by Reactiv Ion Etching

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

179-182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.179

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Online since:

February 1995

Authors:

H. Straub, G. Brunthaler, W. Faschinger, G.H. Bauer, C. Gourgon, L.S. Dang, H. Mariette, C. Vieu

Keywords:

II-VI Compounds, Quantum Wire, Reactive Ion Etching

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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