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Lateral Bandgap Modulation in CdTe/CdMgTe Heterostructures by Selective Ion-Implantation
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Analytical Model for Calculating Exciton Energies as Measured in Zn_1-xCd_xSe/ZnSe and ZnSe/ZnS_xSe_1-x Quantum Wells
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HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Analytical Model for Calculating Exciton Energies...

Analytical Model for Calculating Exciton Energies as Measured in Zn_1-xCd_xSe/ZnSe and ZnSe/ZnS_xSe_1-x Quantum Wells

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

191-194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.191

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Online since:

February 1995

Authors:

A. Wulfes, J. Gutowski, E. Kurtz, D. Hommel, M. Scholl, M. Heuken

Keywords:

Band Offset, Exciton Binding Energy, Exciton Energy, Photoluminescence (PL), Quantum Well, Reflectivity, Strain, ZnCdSe, ZnSe, ZnSSe

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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