Paper Titles

Unified Theory of Defects in Insulators
p.1

Optical and Magnetic Resonance Studies of Defects in GaN
p.9

The Effective Mass Donor in Galliumnitride
p.17

Free Electrons and Resonant Donor State in Gallium Nitride
p.23

Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures
p.25

Carrier Localization in Gallium Nitride
p.31

Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
p.37

Luminescence of Doped and Undoped Bulk Crystals of GaN
p.43

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Unified Theory of Defects in Insulators

Unified Theory of Defects in Insulators

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1

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Online since:

November 1995

Authors:

Y. Toyozawa

Keywords:

Continuum Model, Covalency, Electron Correlation, Electron-Phonon Interactions, Force Range, Ionicity, Metastability, Shallow-Deep Instability, Symmetry Breaking

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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