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Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures
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Carrier Localization in Gallium Nitride
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Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
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Luminescence of Doped and Undoped Bulk Crystals of GaN
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Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy
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Charactrization of Residual Transition Metal Ions in GaN and AIN
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Sn Mössbauer Study of Ion Implanted GaN
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Ni Complexes in Diamond
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Luminescence of Doped and Undoped Bulk Crystals of...

Luminescence of Doped and Undoped Bulk Crystals of GaN

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

43-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.43

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Online since:

November 1995

Authors:

H. Teisseyre, T. Suski, P. Perlin, I. Gorczyca, M. Leszczyński, I. Grzegory, J. Jun, Sylwester Porowski

Keywords:

Gallium Nitride (GaN), Photoluminescence (PL), Zn- and Mg-Impurities

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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