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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Photoluminescent Properties of Undoped GaN...

Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

49-54

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.49

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Online since:

November 1995

Authors:

Gyu-Chul Yi, Bruce W. Wessels

Keywords:

Atmospheric Metal-Organic Vapor Phase Epitaxy, Gallium Nitride (GaN), Photoluminescence (PL)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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