Paper Titles

Unified Theory of Defects in Insulators
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Optical and Magnetic Resonance Studies of Defects in GaN
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The Effective Mass Donor in Galliumnitride
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Free Electrons and Resonant Donor State in Gallium Nitride
p.23

Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures
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Carrier Localization in Gallium Nitride
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Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
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Luminescence of Doped and Undoped Bulk Crystals of GaN
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Free Electrons and Resonant Donor State in Gallium...

Free Electrons and Resonant Donor State in Gallium Nitride

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

23-24

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.23

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Online since:

November 1995

Authors:

P. Perlin, T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J. Jun, M. Boćkowski, Sylwester Porowski, P. Boguslawski, J. Bernholc, T.D. Moustakas

Keywords:

Gallium Nitride (GaN), High-Pressure, Resonant Donor

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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