Paper Titles

Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation
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Photoluminescence of Bulk Si-Ge Single Crystals
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Dopant Diffusion in Strained and Relaxed Si_1-xGe_x
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In Situ Phosphorus Doping of Si and Si_1-xGe_x Epitaxial Layers by RTP/VLP-CVD
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Electrical Transport in Si_xGe_1-x Bulk Alloys
p.353

Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals
p.359

Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
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Irradiation Induced Lattice Defects in Si_1-xGe_x Epitaxial Devices
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Photoluminescence of Deformed Si-Ge Alloy
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Electrical Transport in SixGe1-x Bulk Alloys

Electrical Transport in Si_xGe_1-x Bulk Alloys

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

353-358

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.353

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Online since:

November 1995

Authors:

Teimuraz Mchedlidze, Ichiro Yonenaga, A. Matsui, Koji Sumino

Keywords:

Carrier Transport in Polycrystals, SiGe Alloys

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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