Paper Titles

Photoluminescence of Bulk Si-Ge Single Crystals
p.339

Dopant Diffusion in Strained and Relaxed Si_1-xGe_x
p.345

In Situ Phosphorus Doping of Si and Si_1-xGe_x Epitaxial Layers by RTP/VLP-CVD
p.349

Electrical Transport in Si_xGe_1-x Bulk Alloys
p.353

Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals
p.359

Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
p.365

Irradiation Induced Lattice Defects in Si_1-xGe_x Epitaxial Devices
p.371

Photoluminescence of Deformed Si-Ge Alloy
p.377

Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
p.383

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Electron Paramagnetic Resonance of Phosphorus,...

Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

359-364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.359

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Online since:

November 1995

Authors:

M. Höhne, U. Juda, Jürgen Wollweber, D. Schulz, J. Donecker, A. Gerhardt

Keywords:

Coordination of Phosphorus, Electron Paramagnetic Resonance (EPR), Incorporation of Transition Metals, Si-Ge Mixed Crystals

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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