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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Influence of Cu Contamination and Hydrogenation on...

Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

383-388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.383

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Online since:

November 1995

Authors:

Martin Kittler, C. Ulhaq-Bouillet, V. Higgs

Keywords:

Cu Contamination, Dislocation, Hydrogenation, Recombination, Silicon-Germanium (SiGe)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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