Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

383-388

DOI:

10.4028/www.scientific.net/MSF.196-201.383

Citation:

M. Kittler et al., "Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers", Materials Science Forum, Vols. 196-201, pp. 383-388, 1995

Online since:

November 1995

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$35.00

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