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Electrical Transport in Si_xGe_1-x Bulk Alloys
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Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals
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Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
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Irradiation Induced Lattice Defects in Si_1-xGe_x Epitaxial Devices
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Photoluminescence of Deformed Si-Ge Alloy
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Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
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An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Relaxation-Induced Deep Levels in SiGe/Si...

Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

365-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.365

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Online since:

November 1995

Authors:

Yutaka Mera, Koji Maeda, Yasuhiro Shiraki

Keywords:

Deep Level, Dislocation, DLTS, Heterostructures, Interface, SiGe/Si, Silicon, Strain Relaxation

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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