Hall Effect Measurements on Transmutation Doped Semiconductors

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Periodical:

Materials Science Forum (Volumes 248-249)

Edited by:

A.G. Balogh and G. Walter

Pages:

119-124

DOI:

10.4028/www.scientific.net/MSF.248-249.119

Citation:

G. Rohrlack et al., "Hall Effect Measurements on Transmutation Doped Semiconductors", Materials Science Forum, Vols. 248-249, pp. 119-124, 1997

Online since:

May 1997

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