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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Hall Effect Measurements on Transmutation Doped...

Hall Effect Measurements on Transmutation Doped Semiconductors

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

119-124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.119

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Online since:

May 1997

Authors:

G. Rohrlack, Kristian Freitag, Ch. von Nathusius, R. Vianden, Russell Gwilliam, Brian J. Sealy

Keywords:

Antisites, Hall-Effect, Radioactive Isotopes, Transmutation Doping

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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