Paper Titles

Migration of Vacancies in Deformed Silver Studied by Positron Annihilation
p.533

In-Situ Positron Annihilation During Plastic Deformation of Copper
p.536

An Analytical Approach for Studying Diffusion and Drift Effects of Positrons at the Metal/Semi-Insulating GaAs Interface
p.539

Calculation of Positron ACAR Spectra on C₆₀
p.542

Positron Lifetime in Floating-Zone-Grown Silicon Wafer
p.545

Vacancy-Hydrogen Interaction in Proton-Implanted Si Studied by Positron Lifetime and Infrared Absorption Measurements
p.548

Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion
p.551

Positron Annihilation Studies of Order-Disorder in Cd₃Mg
p.554

Space Charge Transient at the Au/InP:Fe Interface Investigated by the Doppler Shift of Annihilation Radiation Technique
p.557

HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Positron Lifetime in Floating-Zone-Grown Silicon...

Positron Lifetime in Floating-Zone-Grown Silicon Wafer

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-11

Info:

Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

545-547

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.545

Citation:

Cite this paper

Online since:

September 1997

Authors:

Yoshiko Itoh, Hideoki Murakami, Hiroshi Takeno, Satoshi Ushio, Tadashi Takenaka

Keywords:

Doppler Broadening, FZ Silicon Wafer, Grown-in Defects, Positron Lifetime

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: