Paper Titles

An Analytical Approach for Studying Diffusion and Drift Effects of Positrons at the Metal/Semi-Insulating GaAs Interface
p.539

Calculation of Positron ACAR Spectra on C₆₀
p.542

Positron Lifetime in Floating-Zone-Grown Silicon Wafer
p.545

Vacancy-Hydrogen Interaction in Proton-Implanted Si Studied by Positron Lifetime and Infrared Absorption Measurements
p.548

Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion
p.551

Positron Annihilation Studies of Order-Disorder in Cd₃Mg
p.554

Space Charge Transient at the Au/InP:Fe Interface Investigated by the Doppler Shift of Annihilation Radiation Technique
p.557

Structural and Radiation Induced Defects in NiAl
p.560

Application of Wavelets in Positron Annihilation Fermiology
p.563

HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Positron Experiments in δ-Doped GaAs(Si)...

Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-11

Info:

Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

551-553

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.551

Citation:

Cite this paper

Online since:

September 1997

Authors:

T. Laine, Kimmo Saarinen, R. Hautojärvi, C. Corbel, M.J. Ashwin, R.C. Newman

Keywords:

Compensation, Slow Positron Beam, Superlattice

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: